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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 BTN4401N3 Description * The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching application. * High current , IC = 0.6A * Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA Optimal for low Voltage operation * Complementary to BTP4403N3. Symbol BTN4401N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 40 6 0.6 225 150 -55~+150 Unit V V V A mW C C BTN4401N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 20 40 80 82 40 Typ. 0.2 250 6 Max. 100 0.4 0.75 0.95 1.2 390 Unit V V V nA V V V V MHz pF Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Test Conditions IC=100A IC=1mA IE=10A VCE=35V, VBE=-0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE4 Rank Range P 82~180 Q 120~270 R 180~390 Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=3V Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 1 10 100 1000 Collector Current ---IC(mA) BTN4401N3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature --- Ta( ) 200 BTN4401N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 4/4 A L Marking: 3 B 1 2 S TE 2X V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN4401N3 CYStek Product Specification |
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